Ion Beam Analysis capabilities
When an energetic ion beam hits a sample it will interact with the atoms through a number of very complex interactions.
By detecting and measuring the reaction products resulting from the various interactions and their intensities, quantitative data on the sample's constituent elements and their spatial distributions can be readily obtained.
Depending on the technique used and the sample under investigation, probing depths are in the range 5 nanometers to 100 millimeters, and elemental sensitivities are typically of the order 1 to 100 parts per million by weight.
|Particle Induced X-ray Emission (PIXE)||Rutherford Backscattering (RBS)|
|Particle Induced Gamma Emission (PIGE)||Elastic Recoil Detection (ERD & RToF)|
The outline of the experimental setup used at ANSTO's IBA laboratory is shown in the figure below.
|Technique||Applications||Elements||Sensitivity||Depth resolution||Analysis depth|
|RBS||Surface and thin film composition and thickness.||Li - U||Best for heavy elements on light element substrate (eg Cu on Si) typical 10% (Li) - 0.001% (U)||5-20 nm||Up to 1 mm|
|PIXE||Trace element composition of particulates and bulk materials.||Si-U||Opimum near Fe (1ppm) elemental sensitivities range from 1 - 100ppm||Typical proton range 20- 50 microns||Up to 1 mm|
|PIGE||Trace element composition of particulates and bulk materials.||Li-Al||Element dependent, typical|
< 1 ppm for F
< 40 ppm for Na
< 40 ppm for Al
|up to 1 mm|
|NRA||Isotopic tracing and profiling in materials, surfaces and interfaces.||H-Si||Element dependent, typically in range 1 - 100 ppm||5-20 nm||up to 1 mm|
|PESA||Hydrogen in polymers, polymer inter diffusion, hydrogen in solar cells.||H, D||> 0.1%||10-20 nm||up to 1 mm|
|ERD & RToF||Elemental composition and structure of near surface regions. thin films.||H-U||> 0.1 %||10-20 nm||up to 1 mm|
|μPIXE||Trace element mapping in biological, environmental and geological samples.||Si-U||> 100 ppm||up to 3 μm|
|μERDA||Elemental mapping and depth profiling in materials science.||> 0.1 %||> 50 nm||up to 20 μm|
|IBIC||Charge collection mapping in electronic devices and detectors.||up to 1 μm|