Ion Beam Analysis capabilities

 
When an energetic ion beam hits a sample it will interact with the atoms through a number of very complex interactions. 
 
By detecting and measuring the reaction products resulting from the various interactions and their intensities, quantitative data on the sample's constituent elements and their spatial distributions can be readily obtained.
 
Depending on the technique used and the sample under investigation, probing depths are in the range 5 nanometers to 100 millimeters, and elemental sensitivities are typically of the order 1 to 100 parts per million by weight. 
 ANSTO Particle Induced X-ray Emission (PIXE)  ANSTO Rutherford Backscattering (RBS)
 Particle Induced X-ray Emission (PIXE)  Rutherford Backscattering (RBS)   
 ANSTO Particle Induced Gamma Emission (PIGE)  ANSTO Elastic Recoil Detection Analysis (ERDA)
Particle Induced Gamma Emission (PIGE) Elastic Recoil Detection (ERD & RToF)
   
The outline of the experimental setup used at ANSTO's IBA laboratory is shown in the figure below.
 
TechniqueApplicationsElementsSensitivityDepth resolutionAnalysis depth
RBSSurface and thin film composition and thickness.Li - UBest for heavy elements on light element substrate (eg Cu on Si) typical 10% (Li) - 0.001% (U)
5-20 nmUp to 1 mm

 PIXETrace element composition of particulates and bulk materials.Si-UOpimum near Fe (1ppm) elemental sensitivities range from 1 - 100ppm
 
Typical proton range 20- 50 micronsUp to 1 mm

PIGETrace element composition of particulates and bulk materials.Li-AlElement dependent, typical
< 1 ppm for F
< 40 ppm for Na
< 40 ppm for Al
 
 up to 1 mm

NRAIsotopic tracing and profiling in materials, surfaces and interfaces.H-SiElement dependent, typically in range 1 - 100 ppm
 
5-20 nmup to 1 mm

PESAHydrogen in polymers, polymer inter diffusion, hydrogen in solar cells.H, D> 0.1%10-20 nmup to 1 mm

ERD & RToFElemental composition and structure of near surface regions. thin films.
 
H-U> 0.1 %10-20 nmup to 1 mm

μPIXETrace element mapping in biological, environmental and geological samples.
 
Si-U> 100 ppm up to 3 μm

μERDAElemental mapping and depth profiling in materials science.
 
 > 0.1 %> 50 nmup to 20 μm

IBICCharge collection mapping in electronic devices and detectors.   up to 1 μm